Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers

Fabrication and Characterization of 0.2μm InAlAs/InGaAs Metamorphic HEMT’s with Inverse Step- Graded InAlAs Buffer on GaAs Substrate

Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strainrelaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content....

Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1)

Epitaxial Growth of Thin Films

This chapter gives an introduction to the epitaxial growth of thin films on solid substrates. The term epitaxy refers to the growth of a crystalline layer on (epi) the surface of a crystalline substrate, where the crystallographic orientation of the substrate surface imposes a crystalline order (taxis) onto the thin film. This implies that film elements can be grown, up to a certain thickness, ...

Epitaxial growth of thin films

The term ‘epitaxial’ is applied to a film grown on top of the crystalline substrate in ordered fashion that atomic arrangement of the film accepts crystallographic structure of the substrate. Epitaxial growth is one of the most important techniques to fabricate various ‘state of the art’ electronic and optical devices. Modern devices require very sophisticated structure, which are composed of t...

Growth of hexagonal GaN thin films on Si(1 1 1) with cubic SiC buffer layers

The growth of GaN films on silicon or sapphire substrates has not been straightforward due to their large mismatch ('13%). SiC is structurally the closest material to GaN (especially cubic form) and has a small lattice mismatch (3.5%) between SiC and GaN, and therefore can be useful as the substrate for GaN. Single-crystal wafers of cubic SiC and GaN, however, are hard to obtain and have not be...